a,nov,2010 to-220-3l plastic-encapsulate diodes MBR30100CT schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 100 v v r(rms) rms reverse voltage 70 v i o average rectified output current 30 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 350 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage v (br) i r =1ma 100 v reverse current i r v r =100v 100 a forward voltage v f 1 i f =15a 1 v typical total capacitance c tot v r =4v,f=1mhz 3 00 pf to-220-3l 1. anode 2. cathode 3. a node forward voltage v f 2* i f = 30 a 1.05 v 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,jan,2014
0 5 10 15 20 0 200 400 600 800 1000 1200 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 0 20406080100 1e-5 1e-4 1e-3 0.01 0.1 1 10 t a =25 f=1mhz capacitance characteristics per diode junction capacitance c j (pf) reverse voltage v r (v) power derating curve power dissipation p d (w) ambient temperature t a ( ) forward characteristics forward voltage v f (v) forward current i f (a) t a = 2 5 t a = 1 0 0 30 MBR30100CT typical characteristics reverse characteristics reverse voltage v r (v) reverse current i r (ma) t a =25 t a =100 d,jan,2014
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